Additional Properties
- Einecs Number 233-054-0
- Synonyms SILICON TETRACHLORIDE
- HMIS 3-0-2-X
- Molecular Formula Cl4Sn
- Molecular Weight (g/mol) 169.90
- Purity (%) 99.99%
- TSCA Yes
- Boiling Point (˚C/mmHg) 57.6
- Density (g/mL) 1.481
- Melting Point (˚C) -70°
- Refractive Index @ 20˚C 1.4153
Safety
Silicon Chemistry, Applied Technology
Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.
