BIS(TRIMETHYLSILYL)SELENIDE

Product Code: SIB1871.0
CAS No: 4099-46-1
SDS Sheets: EU | US
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4099-46-1
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50 g
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Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • HMIS

    4-3-1-X
  • Molecular Formula

    C6H18SeSi2
  • Molecular Weight (g/mol)

    225.34
  • TSCA

    No
  • Boiling Point (˚C/mmHg)

    58-59/11
  • Density (g/mL)

    0.90
  • Flash Point (˚C)

    43 °C
  • Melting Point (˚C)

    -7°
  • Refractive Index @ 20˚C

    1.481

Additional Properties

  • Hydrolytic Sensitivity

    7: reacts slowly with moisture/water

    • Safety

  • Packaging Under

    Nitrogen

    • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Bis(trimethylsilyl)selenide; Hexamethyldisilselanane

  • Intermediate for preparation of CdSe quantum dots
  • Forms luminescent red l-lll-lV quantum dots
  • Converts aldehydes to selenoaldehydes under n-BuLi catalysis