TANTALUM(V) ETHOXIDE

Product Code: AKT810
CAS No: 6074-84-6
SDS Sheets: EU | US
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6074-84-6
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3 kg
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Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    228-010-2
  • HMIS

    2-2-1-X
  • Molecular Formula

    C10H25O5Ta
  • Molecular Weight (g/mol)

    406.26
  • TSCA

    Yes
  • Boiling Point (˚C/mmHg)

    145/0.1
  • Density (g/mL)

    1.566
  • Flash Point (˚C)

    40 °C
  • Melting Point (˚C)

    18-9°
  • Refractive Index @ 20˚C

    1.4855

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents

    • Application

    Employed in sol-gel synthesis of bulk and thin film Ta2O5 as a capacitor dielectric.1
    Employed in sol-gel synthesis of lithium tantalate ferroelectrics.2
    Forms chiral complexes with substituted trialkanolamines useful in asymmetric catalysis.3
    Employed in low-pressure CVD of optical interference filters.4

    Reference

    1. Ling, H. et al. In Science of Ceramic Processing, Hench, Ed.; Wiley 1986.
    2. Pluré, P. J. Mater. Res. 1993, 8, 334.
    3. Nugent, W. et al. J. Am. Chem. Soc. 1994, 116, 6142.
    4. George, M. et al. Vacuum Techn. Sci. 2000, 22.

    Safety

  • Packaging Under

    Nitrogen

    • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Tantalum(V) ethoxide; Pentaethoxytantalum; Tantalum(5+) ethanolate

  • Soluble: toluene, ethanol
  • Vapor pressure, 20 °C: 8 mm
  • Vapor pressure, 50 °C: 26 mm
  • Molecular complexity: 1.98
  • Employed in sol-gel synthesis of bulk and thin film Ta2O5 as a capacitor dielectric
  • Employed in sol-gel synthesis of lithium tantalate ferroelectrics
  • Forms chiral complexes with substituted trialkanolamines useful in asymmetric catalysis
  • Employed in low-pressure CVD of optical interference filters
  • Tavalite® jewelry in which alternating TaO5-SiO2 are deposited onto cubic zirconia