Application
Employed in doped CVD of silicon dioxide.1
- Einecs Number 221-543-1
- HMIS 4-3-1-X
- Molecular Formula C6H15AsO3
- Molecular Weight (g/mol) 210.07
- Purity (%) 97%
- TSCA No
- Boiling Point (˚C/mmHg) 166
- Density (g/mL) 1.21
- Density Temperature (˚C) 25
- Flash Point (˚C) 49 °C
- Refractive Index @ 20˚C 1.433
Reference
1. Becker, F. et al. J. Electrochem. Soc. 1989, 136, 3033.
Safety
