BIS(DIETHYLAMINO)SILANE

Product Code: SIB1069.0
CAS No: 27804-64-4
SDS Sheets: EU | US
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27804-64-4
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Price
 
10 g
$285.00
100 g
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Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Synonyms

    BDEAS
  • HMIS

    4-2-1-X
  • Molecular Formula

    C8H22N2Si
  • Molecular Weight (g/mol)

    174.16
  • Purity (%)

    97%
  • TSCA

    Yes
  • Boiling Point (˚C/mmHg)

    70/30
  • Density (g/mL)

    0.804

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents

    • Application

    ALD precursor for HfSiOx dielectric films.1

    Reference

    1. Katamreddy, R. et al. J. Electrochem. Soc. 2008, 155, G163.

    Safety

  • Packaging Under

    Nitrogen

    • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.