HEXAMETHYLDISILANE

Product Code: SIH6109.0
CAS No: 1450-14-2
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1450-14-2
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1.5 kg
$552.00
13 kg
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150 kg
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Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    215-911-0
  • Synonyms

    HMD
  • HMIS

    2-4-0-X
  • Molecular Formula

    C6H18Si2
  • Molecular Weight (g/mol)

    146.38
  • TSCA

    Yes
  • Delta H Vaporization (kJ/mol)

    9.5 kcal/mole
  • Boiling Point (˚C/mmHg)

    112-113
  • Density (g/mL)

    0.7293
  • Flash Point (˚C)

    -1 °C
  • Melting Point (˚C)

    12-14°
  • Refractive Index @ 20˚C

    1.4214
  • Viscosity at 25 ˚C (cSt)

    '1

Additional Properties

  • Hydrolytic Sensitivity

    1: no significant reaction with aqueous systems

    • Application

    Review of synthetic utility.1
    Source for trimethylsilyl anion.2,3
    Replaces aromatic nitriles with TMS groups in presence of [RhCl(cod)]2.4
    Precursor for CVD of silicon carbide.5
    Brings about the homocoupling of arenesulfonyl chlorides in the presence of Pd2(dba)3.6
    Used as a solvent for the direct borylation of fluoroaromatics.7
    Reacts with alkynes to form siloles.8
    Undergoes the silylation of acid chlorides to give acylsilanes.9

    Reference

    1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 278-284.
    2. Shippey, M. A. et al. J. Org. Chem. 1977, 42, 2654.
    3. F&F: Vol. 10, p 96; Vol.11, p 253.
    4. Tobisu, M. et al. J. Am. Chem. Soc. 2006, 128, 4152.
    5. Thin Solid Films 1999, 252, 13.
    6. Kashiwabara, T.; Tanaka, M. Tetrahedron Lett. 2005, 46, 7125.
    7. Teltewskoi, M. et al. Angew. Chem., Int. Ed. Engl. 2010, 49, 3947.
    8. Akagawa, K. et al. Synlett 2011, 22, 813.
    9. Capperucci, A. et al. J. Org. Chem. 1988, 53, 3612.

    Safety

  • Packaging Under

    Nitrogen

    • Hexamethyldisilane; HMD; 2,2,3,3-Tetramethyl-2,3-disilabutane

  • Viscosity: 1.0 cSt
  • ΔHcomb: 5,909 kJ/mol
  • ΔHform: -494 kJ/mol
  • ΔHvap: 39.8 kJ/mol
  • Vapor pressure, 20 °C: 22.9 mm
  • Ea decomposition at 545 K: 337 kJ/mol
  • Rotational barrier, Si–Si: 4.40 kJ/mol
  • Secondary NMR reference: δ = 0.045
  • Source for trimethylsilyl anion
  • Replaces aromatic nitriles with TMS groups in presence of [RhCl(cod)]2
  • Precursor for CVD of silicon carbide
  • Brings about the homocoupling of arenesulfonyl chlorides in the presence of Pd2(dba)3
  • Used as a solvent for the direct borylation of fluoroaromatics
  • Reacts with alkynes to form siloles
  • Undergoes the silylation of acid chlorides to give acylsilanes